Datasheet > IXTH76N25T

IXTH76N25T

更新时间： 2024-02-21 15:53:53

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
8页	312K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(ON)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXTH76N25T 数据手册

Trench^TM

Power MOSFET

V_DSS= 250V

I_D25= 76A

R_DS(on) 44m

IXTA76N25T

IXTP76N25T

IXTQ76N25T

IXTH76N25T

N-Channel Enhancement Mode

Typical Avalanched BV = 300V

TO-263 AA (IXTA)

TO-220AB (IXTP)

TO-3P (IXTQ)

D (Tab)

TO-247(IXTH)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

250

V_GSS

V_GSM

Continuous

Transient

 20

 30

D (Tab)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

170

G = Gate

S = Source

= Drain

Tab = Drain

I_A

E_AS

T_C= 25C

1.5

P_D

T_C= 25C

460

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

^Avalanche Rated

^High Current Handling Capability

^Fast Intrinsic Rectifier

Low R_DS(on)

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



F_C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb

M_d

Mounting Torque (TO-220, TO-3P & TO-247)

1.13/10

Nm/lb.in

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

Advantages



Easy to Mount

Space Savings

TO-247



High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS= 0V, I_D= 1mA

V_GS= 0V, I_D= 10mA

250

^DC-DC Converters

^Battery Chargers

300

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250μA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

3.0

5.0

^Switch-Mode and Resonant-Mode

Power Supplies

 100 nA

A

^DC Choppers

^AC Motor Drives

^Uninterruptible Power Supplies

^High Speed Power Switching

Applications

I_DSS

T_J= 125C

200 μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

44 m

DS99663G(11/15)

12 3 4 5 6 7 8

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