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IXTH6N60 PDF预览

IXTH6N60

更新时间: 2024-11-18 21:07:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
1页 110K
描述
Transistor

IXTH6N60 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

IXTH6N60 数据手册

  

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode