Datasheet > IXTH72N20

IXTH72N20

更新时间： 2024-11-18 12:31:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	117K
描述
N-Channel Enhancement Mode

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中文翻译

获取价格

数据手册
替代型号

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IXTH72N20 数据手册

Advance Technical Information

IXTH 72N20

IXTT 72N20

V_DSS

I_D25

= 200 V

= 72 A

High Current

Power MOSFET

R_DS(on)= 33 mΩ

N-Channel Enhancement Mode

TO-247AD(IXTH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

200

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

T_C= 25°C

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

288

TO-268 (IXTT) Case Style

E_AR

E_AS

T_C= 25°C

1.5

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_C= 25°C

400

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

M_d

1.13/10 Nm/lb.in.

Weight

TO-247AD

TO-268

Low package inductance

- easy to drive and to protect

Advantages

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Easy to mount

Space savings

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= ±20 V_DC, V_DS= 0

V_DS= V_DSS

200

2.0

4.0

High power density

±100

I_DSS

T_J= 25°C

T_J= 125°C

µA

_GS= 0 V

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

R_DS(on)

33 mΩ

DS99019(03/03)

中文翻译

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IXTH72N20 替代型号

型号	品牌	替代类型	描述	数据表
IXFH74N20P	IXYS	类似代替	PolarHT HiPerFET Power MOSFET
IXTQ74N20P	IXYS	功能相似	PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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