IXTH6N80A

更新时间： 2024-11-17 22:11:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	91K
描述
N-Channel Enhancement Mode

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中文翻译

获取价格

数据手册

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IXTH6N80A 数据手册

V_DSS

I_D25

R_DS(on)

Standard

Power MOSFET

IXTH/IXTM 6 N80 800 V 6 A 1.8 Ω

IXTH/IXTM 6 N80A 800 V 6 A 1.4 Ω

N-Channel Enhancement Mode

Symbol

TestConditions

Maximum Ratings

TO-247 AD (IXTH)

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

D (TAB)

V_GSM

I_D25

I_DM

T_C= 25°C

TO-204 AA (IXTM)

T_C= 25°C, pulse width limited by T_JM

P_D

T_C= 25°C

180

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

M_d

Mounting torque

1.13/10 Nm/lb.in.

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

●

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

●

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

●

Switch-mode and resonant-mode

power supplies

Motor controls

Uninterruptible Power Supplies (UPS)

DC choppers

V_DSS

V_GS= 0 V, I_D= 3 mA

800

●

V_GS(th)

V_DS= V_GS, I_D= 250 µA

4.5

●

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 µA

V_DS= 0.8 • V_DSS

T_J= 25°C

Advantages

V_GS= 0 V

T_J= 125°C

●

Easy to mount with 1 screw (TO-247)

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D256N80

6N80A

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

1.8

1.4

Ω

(isolated mounting screw hole)

Space savings

High power density

●

91542E(5/96)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSCorporation

IXYSSemiconductor

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700 Fax: 408-496-0670

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030

Fax: +49-6206-503629

12 3 4

中文翻译

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