IXTH6N80A

更新时间： 2024-01-05 14:08:25

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	91K
描述
N-Channel Enhancement Mode

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数据手册

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IXTH6N80A 数据手册

IXTH 6N80

IXTM 6N80

IXTH 6N80A

IXTM 6N80A

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD (IXTH) Outline

V_DS= 10 V; I_D= 0.5 • I_D25, pulse test

C_iss

C_oss

C_rss

2800

250

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

100

t_d(on)

t_r

t_d(off)

t_f

35 100

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 I_D25

40 110

100 200

60 100

Terminals: 1 - Gate

2 - Drain

Tab - Drain

R_G= 2 Ω, (External)

3 - Source

Dim.

Millimeter

Inches

Min. Max.

Q_g(on)

Q_gs

110 130

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 I_D25

Q_gd

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

R_thJC

R_thCK

0.7 K/W

K/W

.016 .031

.819 .845

.610 .640

0.25

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

.780 .800

4.50

.177

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

3.55

5.89

3.65

.140 .144

6.40 0.232 0.252

Symbol

TestConditions

4.32

5.49

6.15 BSC

.170 .216

242 BSC

I_S

V_GS= 0 V

I_SM

V_SD

Repetitive; pulse width limited by T_JM

TO-204AA (IXTM) Outline

I_F= I_S, V_GS= 0 V,

1.5

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

I_F= I_S, -di/dt = 100 A/µs, V_R= 100 V

900

Pins

1 - Gate

2 - Source

Case - Drain

Dim.

Millimeter

Inches

Min. Max.

6.4

11.4

3.42

1.09

.250 .450

.135

.038 .043

.97

22.22

.875

10.67 11.17

.420 .440

.205 .225

5.21

5.71

7.93

3.84

p1 3.84

.312

4.19

.151 .165

30.15 BSC

1.187 BSC

13.33

4.77

.525

.188

16.64 17.14

.655 .675

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

123 4

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