IXTH6N80A

更新时间： 2024-01-26 15:01:49

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	91K
描述
N-Channel Enhancement Mode

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中文翻译

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数据手册

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IXTH6N80A 数据手册

IXTH6N80

IXTM6N80

IXTH6N80A

IXTM6N80A

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

V_GS= 10V

T_J= 25°C

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

V_GS- Volts

V_DS- Volts

Fig. 3 R_DS(on)vs. Drain Current

Fig. 4 Temperature Dependence

of Drain to Source Resistance

3.0

2.8

2.6

2.4

2.2

2.0

1.8

2.50

T_J= 25°C

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

I_D= 2.5A

_GS= 10V

V_GS= 15V

-50 -25

25 50 75 100 125 150

T_J- Degrees C

I_D- Amperes

Fig. 5 Drain Current vs.

Case Temperature

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

BV_CES

V_GS(th)

6N80A

6N80

-50 -25

25 50 75 100 125 150

T_C- Degrees C

-50 -25

25 50 75 100 125 150

T_J- Degrees C

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSCorporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700 Fax: 408-496-0670

IXYSSemiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030 Fax: +49-6206-503629

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