IXTH6N80A

更新时间： 2024-01-17 14:18:33

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	91K
描述
N-Channel Enhancement Mode

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数据手册

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IXTH6N80A 数据手册

IXTH6N80

IXTM6N80

IXTH6N80A

IXTM6N80A

Fig.7 Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

10us

V_DS= 500V

I_D= 3.0A

100us

1ms

Limited by R_DS(on)

I_G= 10mA

10ms

100ms

0.1

10 20 30 40 50 60 70 80

Gate Charge - nCoulombs

100

1000

V_DS- Volts

Fig.9 Capacitance Curves

Fig.10 Source Current vs. Source

to Drain Voltage

2750

2500

2250

2000

1750

1500

1250

1000

750

C_iss

f = 1 MHz

V_DS= 25V

T_J= 125°C

T_J= 25°C

500

C_oss

C_rss

250

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_CE- Volts

V_DS- Volts

Fig.11 Transient Thermal Impedance

D=0.5

D=0.2

0.1 D=0.1

D=0.05

D=0.02

D=0.01

0.01

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

Time - Seconds

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

1 2 34

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