Datasheet > IXTH60N20L2

IXTH60N20L2

更新时间： 2024-11-19 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
6页	176K
描述
这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用，具有低热阻、高功率密度和正向偏压安全工作区(RBSOA)。当功率MOSFET以线性模式工作时，相对于传统的开关模式具有相当高的热应

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中文翻译

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数据手册

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IXTH60N20L2 数据手册

Advance Technical Information

Linear L2^TMPower

MOSFET w/ Extended

FBSOA

V_DSS= 200V

I_D25= 60A

R_DS(on)≤ 45mΩ

IXTT60N20L2

IXTQ60N20L2

IXTH60N20L2

TO-268 (IXTT)

N-Channel Enhancement Mode

Avalanche Rated

Tab

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

200

TO-3P (IXTQ)

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

T_C= 25°C

Tab

T_C= 25°C, Pulse Width Limited by T_JM

150

TO-247(IXTH)

I_A

T_C= 25°C

E_AS

P_D

T_C= 25°C

540

T_J

-55 to +150

+150

°C

T_JM

T_stg

Tab

-55 to +150

T_L

1.6mm (0.063in) from Case for 10s

Plastic Body for 10s

300

260

°C

G = Gate

= Drain

T_SOLD

S = Source

Tab = Drain

M_d

Mounting Torque (TO-247&TO-3P)

1.13/10

Nm/lb.in.

Weight

TO-268

TO-3P

TO-247

4.0

5.5

6.0

Features

^zDesigned for Linear Operation

^zInternational Standard Packages

^zAvalanche Rated

^zGuaranteed FBSOA at 75°C

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

200

2.5

Typ.

Max.

Advantages

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Easy to Mount

Space Savings

High Power Density

4.5

±100 nA

μA

I_DSS

Applications

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

50 μA

45 mΩ

^zSolid State Circuit Breakers

^zSoft Start Controls

R_DS(on)

^zLinear Amplifiers

^zProgrammable Loads

^zCurrent Regulators

DS100203(10/09)

12 3 4 5 6

中文翻译

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