Datasheet > IXTH68P20T

IXTH68P20T

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		开关驱动高压
页数	文件大小	规格书
7页	206K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱动电路，避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。这让设计人员可以减少元件数量，从而简

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中文翻译

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数据手册

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IXTH68P20T 数据手册

Preliminary Technical Information

TrenchP^TM

Power MOSFETs

V_DSS= - 200V

I_D25= - 68A

IXTT68P20T

IXTH68P20T

R_DS(on)

≤

55mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-268 (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247 (IXTH)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 200

V_DGR

V_GSS

V_GSM

Continuous

Transient

±15

±25

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 68

D (Tab)

- 200

I_A

T_C= 25°C

- 68

2.5

G = Gate

S = Source

= Drain

Tab = Drain

E_AS

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

568

Features

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

International Standard Packages

Avalanche Rated

Extended FBSOA

Fast Intrinsic Diode

Low R_DS(ON)and Q_G

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

- 200

- 2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

- 4.0

±100 nA

I_DSS

- 10 μA

T_J= 125°C

- 200 μA

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

55 mΩ

DS100370A(01/13)

12 3 4 5 6 7

中文翻译

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