5秒后页面跳转
IXTH64N10L2 PDF预览

IXTH64N10L2

更新时间: 2024-11-18 20:03:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 345K
描述
Power Field-Effect Transistor,

IXTH64N10L2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

IXTH64N10L2 数据手册

 浏览型号IXTH64N10L2的Datasheet PDF文件第2页浏览型号IXTH64N10L2的Datasheet PDF文件第3页浏览型号IXTH64N10L2的Datasheet PDF文件第4页浏览型号IXTH64N10L2的Datasheet PDF文件第5页浏览型号IXTH64N10L2的Datasheet PDF文件第6页浏览型号IXTH64N10L2的Datasheet PDF文件第7页 
Preliminary Technical Information  
LinearL2TM  
Power MOSFET  
w/Extended FBSOA  
VDSS = 100V  
ID25 = 64A  
RDS(on) 32m  
IXTA64N10L2  
IXTP64N10L2  
IXTH64N10L2  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
TO-263  
(IXTA)  
Avalanche Rated  
G
S
D (Tab)  
TO-220  
(IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
100  
100  
V
V
G
VDGR  
D
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-247  
(IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
64  
A
A
140  
IA  
EAS  
TC = 25C  
TC = 25C  
32  
2
A
J
G
D
D (Tab)  
S
PD  
TC = 25C  
357  
W
TJ  
-55 to +150  
+150  
C  
C  
C  
G = Gate  
D
= Drain  
TJM  
Tstg  
S = Source  
Tab = Drain  
-55 to +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Guaranteed FBSOA at 75C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Solid State Circuit Breakers  
Soft Start Controls  
4.5  
Linear Amplifiers  
100 nA  
A  
Programmable Loads  
Current Regulators  
IDSS  
5
TJ = 125C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
25 A  
32 m  
RDS(on)  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100557A(11/18)  

与IXTH64N10L2相关器件

型号 品牌 获取价格 描述 数据表
IXTH64N65X IXYS

获取价格

Power Field-Effect Transistor,
IXTH64N65X LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTH67N08 IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH67N08MA ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N08MB IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH67N10 IXYS

获取价格

MegaMOSFET
IXTH67N10MA ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N10MB IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IXTH68N20 IXYS

获取价格

High Current MegaMOSFET
IXTH68P20T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱