Datasheet > IXTH6N150

IXTH6N150

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压脉冲电源开关调节器
页数	文件大小	规格书
7页	323K
描述
高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路和电流调节器。功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXTH6N150 数据手册

High Voltage

Power MOSFET

V_DSS= 1500V

I_D25= 6A

R_DS(on) 3.5

IXTT6N150

IXTH6N150

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-268

(IXTT)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1500

D (Tab)

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

TO-247

(IXTH)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25C

500

D (Tab)

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

540

Tab = Drain

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.



International Standard Packages

Molding Epoxies Weet UL 94 V-0

Flammability Classification

Fast Intrinsic Diode



Weight

TO-268

TO-247



Low Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.



Easy to Mount

Space Savings

High Power Density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



5.0

100 nA

Applications

I_DSS

25 A

T_J= 125C

250 A



High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

3.5



DS100233C(03/19)

12 3 4 5 6 7

中文翻译

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