Datasheet > IXTH64N65X

IXTH64N65X

更新时间： 2024-11-18 21:06:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	161K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH64N65X 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	8.34
Base Number Matches：	1

IXTH64N65X 数据手册

Preliminary Technical Information

X-Class

Power MOSFET

V_DSS= 650V

I_D25= 64A

R_DS(on) 51m

IXTH64N65X

N-Channel Enhancement Mode

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

650

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

Tab

I_D25

I_DM

T_C= 25C

G = Gate

S = Source

= Drain

T_C= 25C, Pulse Width Limited by T_JM

128

Tab = Drain

P_D

T_C= 25C

890

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

M_d

Mounting Torque

1.13/10

Nm/lb.in



International Standard Package

Low R_DS(ON)and Q_G

Low Package Inductance



Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

Applications

3.0

5.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives



I_DSS

10 A

100 A



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

51 m

Robotics and Servo Controls

DS100618C(6/15)

12 3 4 5

中文翻译

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