Datasheet > IXTH64N10L2

IXTH64N10L2

更新时间： 2024-11-18 21:14:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	175K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTH64N10L2 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

IXTH64N10L2 数据手册

Advance Technical Information

LinearL2^TMPower

MOSFETs w/Extended

FBSOA

V_DSS= 100V

I_D25= 64A

R_DS(on) 32m

IXTA64N10L2

IXTP64N10L2

IXTH64N10L2

N-Channel Enhancement Mode

Guaranteed FBSOA

TO-263AA (IXTA)

Avalanche Rated

D (Tab)

TO-220AB (IXTP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

100

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

D (Tab)

TO-247 (IXTH)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

140

I_A

E_AS

T_C= 25C

P_D

T_C= 25C

357

D (Tab)

T_J

-55 to +150

+150

C

G = Gate

S = Source

= Drain

T_JM

T_stg

Tab = Drain

-55 to +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

^Designed for Linear Operation

^International Standard Packages

^Avalanche Rated

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220 & TO-247)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

^Guaranteed FBSOA at 75C

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

100

2.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^Solid State Circuit Breakers

^Soft Start Controls

4.5

^Linear Amplifiers

100 nA

A

^Programmable Loads

^Current Regulators

I_DSS

T_J= 125C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

25 A

32 m

R_DS(on)

DS100557(8/13)

12 3 4 5 6

中文翻译

下载PDF

与IXTH64N10L2相关器件

型号	品牌	获取价格	描述	数据表
IXTH64N65X	IXYS	获取价格	Power Field-Effect Transistor,
IXTH64N65X	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTH67N08	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH67N08MA	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 67A I(D) \| TO-247(5)
IXTH67N08MB	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH67N10	IXYS	获取价格	MegaMOSFET
IXTH67N10MA	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 67A I(D) \| TO-247(5)
IXTH67N10MB	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IXTH68N20	IXYS	获取价格	High Current MegaMOSFET
IXTH68P20T	LITTELFUSE	获取价格	Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱