Datasheet > IXTH50P10

IXTH50P10

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		转换器
页数	文件大小	规格书
5页	146K
描述
P通道标准功率MOSFET的额定电压范围为-100V至-600V，并采用业内流行的TO-247和可表面贴装的TO-268封装。这些产品是降压转换器以及需要接地的负载的理想选择。它们可与对等的N

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数据手册

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IXTH50P10 数据手册

V_DSS= - 100V

I_D25= - 50A

IXTH50P10

IXTT50P10

Standard

Power MOSFET

R_DS(on)

≤

55mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

(TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

-100

V_DGR

TO-268 (IXTT)

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

- 50

- 200

I_A

T_C= 25°C

- 50

(TAB)

E_AS

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

^zInternational standard packages

JEDEC TO-247 AD

M_d

Mounting torque (TO-247)

1.13 / 10

Nm/lb.in.

^zLow R_DS(ON)HDMOS^TMprocess

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

Weight

TO-247

TO-268

^zLow package inductance (< 5nH)

- easy to drive and to protect

Applications

High side switching

Push-pull amplifiers

DC Choppers

Automatic test equipment

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250 μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±20V, V_DS= 0V

-100

- 3.0

- 5.0

Advantages

±100 nA

Easy to mount with 1 screw

I_DSS

V_DS= 0.8 • V_DSS

V_GS= 0V

- 25 μA

-1 mA

(isolated mounting screw hole)

Space savings

High power density

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

55 mΩ

DS98905E(6/08)

12 3 4 5

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