Datasheet > IXTH50P10

IXTH50P10

更新时间： 2024-11-17 22:08:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	81K
描述
Standard Power MOSFET

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中文翻译

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数据手册

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IXTH50P10 数据手册

Advance Technical Information

IXTH 50P10

Standard Power MOSFET

V_DSS= -100 V

I_D25= -50 A

R_DS(on)= 55 mΩ

P-Channel Enhancement Mode

Avalanche Rated

Symbol

TestConditions

Maximum Ratings

TO-247 AD

V_DSS

V_DGR

T_J= 25°C to 150°C

-100

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

D (TAB)

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

-50

-200

-50

T_C= 25°C, pulse width limited by T_J

T_C= 25°C

G = Gate,

S = Source,

D=Drain,

TAB = Drain

E_AR

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

• International standard package

JEDEC TO-247 AD

• Low R_{DS (on)}HDMOS^TMprocess

-55 ... +150

T_L

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

M_d

Mountingtorque

1.13/10 Nm/lb.in.

Weight

• Low package inductance (<5 nH)

- easy to drive and to protect

Applications

Symbol

V_DSS

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

• High side switching

• Push-pull amplifiers

• DC choppers

min. typ. max.

V_GS= 0 V, I_D= -250 µA

-100

-3.0

• Automatic test equipment

V_GS(th)

I_GSS

V_DS= V_GS, I_D= -250 µA

V_GS= ±20 V_DC, V_DS= 0

-5.0

±100

-25

µA

Advantages

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

• Space savings

I_DSS

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

-1 mA

R_DS(on)

V_GS= -10 V, I_D= 0.5 I_D25

55 mΩ

• High power density

98905 (2/02)

中文翻译

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