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IXTH52N65X PDF预览

IXTH52N65X

更新时间: 2024-11-05 21:21:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 157K
描述
Power Field-Effect Transistor,

IXTH52N65X 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:8.4Base Number Matches:1

IXTH52N65X 数据手册

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X-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 52A  
RDS(on) 68m  
IXTH52N65X  
N-Channel Enhancement Mode  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
D
Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
G = Gate  
S = Source  
D
= Drain  
ID25  
IDM  
TC = 25C  
52  
A
A
Tab = Drain  
TC = 25C, Pulse Width Limited by TJM  
104  
PD  
TC = 25C  
660  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Package  
Low RDS(ON) and QG  
Low Package Inductance  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Weight  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
100 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
68 m  
DS100604D(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  

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