Datasheet > IXTH50N30L2

IXTH50N30L2

更新时间： 2024-11-05 21:06:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	174K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH50N30L2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTH50N30L2 数据手册

Advance Technical Information

LinearL2^TM

Power MOSFET

V_DSS= 300V

I_D25= 50A

IXTH50N30L2

R_DS(on) 72m

w/ Extended FBSOA

N-Channel Enhancement Mode

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

300

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

 20

 30

G = Gate

S = Source

= Drain

Tab = Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

120

I_A

T_C= 25C

E_AS

2.5

P_D

T_C= 25C

540

Features

T_J

-55 ... +150

150



C

T_JM

T_stg

^Designed for Linear Operation

^International Standard Package

^Avalanche Rated

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^Guaranteed FBSOA at 75C

M_d

Mounting Torque

TO-247

1.13 / 10

Nm/lb.in

Advantages

Weight



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C Unless Otherwise Specified)

Min.

300

2.5

Typ.

Max.

^Solid State Circuit Breakers

^Soft Start Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.5

^Linear Amplifiers

^Programmable Loads

^Current Regulators

          100 nA

I_DSS

10 A

T_J= 125C

350 A

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

72 m

DS100892A (2/18)

12 3 4 5 6

中文翻译

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