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IXTP50N25T PDF预览

IXTP50N25T

更新时间: 2024-11-21 12:02:23
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
6页 235K
描述
Trench Gate Power MOSFET N-Channel Enhancement Mode

IXTP50N25T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:4.47其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W最大脉冲漏极电流 (IDM):130 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTP50N25T 数据手册

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IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
Trench Gate  
Power MOSFET  
VDSS = 250V  
ID25 = 50A  
RDS(on) 60mΩ  
N-Channel Enhancement Mode  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D (Tab)  
D
D (Tab)  
D (Tab)  
S
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
VGSM  
Transient  
± 30  
V
G
D
D (Tab)  
= Drain  
S
ID25  
IDM  
TC = 25°C  
50  
130  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G = Gate  
D
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
A
J
S = Source  
Tab = Drain  
1.5  
PD  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z Avalanche Rated  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
Low RDS(on)  
TL  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 s  
300  
260  
°C  
°C  
z
Md  
FC  
Mounting Torque (TO-220, TO-3P &TO-247)  
Mounting Force (TO-263)  
1.13 / 10  
10..65 / 2.2..14.6  
Nmlb.in.  
N/lb.  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
z High Power Density  
z Easy to Mount  
z Space Savings  
TO-247  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ . Max.  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
z DC-DC Coverters  
z Battery Chargers  
BVDSS  
VGS(th)  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
250  
3.0  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
5.0  
IGSS  
IDSS  
VGS = ± 20V, VDS = 0V  
± 100 nA  
μA  
z DC Choppers  
z AC and DC Motor Drives  
z Uninterrupted Power Supplies  
z High Speed Power Switching  
Applications  
VDS = VDSS, VGS = 0V  
1
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
150 μA  
60 mΩ  
RDS(on)  
DS99346B(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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