Datasheet > IXTP64N055T

IXTP64N055T

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网栅开关脉冲晶体管
页数	文件大小	规格书
6页	251K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(ON)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXTP64N055T 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

IXTP64N055T

IXTY64N055T

V_DSS= 55

I_D25= 64

R_DS(on)≤ 13 mΩ

N-ChannelEnhancementMode

AvalancheRated

TO-220 (IXTP)

D (TAB)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C; R_GS= 1 MΩ

TO-252 (IXTY)

V_GSM

Transient

± 20

I_D25

I_L

I_DM

T_C= 25°C

170

Package Current Limit, RMS

TO-252

D (TAB)

T_C= 25°C, pulse width limited by T_JM

I_AR

E_AS

T_C= 25°C

250

G = Gate

S = Source

D = Drain

TAB = Drain

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 175°C, R_G= 18 Ω

V/ns

Features

^ꢀUltra-low On Resistance

^ꢀUnclamped Inductive Switching (UIS)

rated

T_C= 25°C

130

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 °C Operating Temperature

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

Advantages

ꢀ

Easy to mount

ꢀ

M_d

Mounting torque (TO-220)

1.13 / 10 Nm/lb.in.

Space savings

ꢀ

High power density

Weight

TO-220

TO-252

0.35

Applications

ꢀ

Automotive

- Motor Drives

- High Side Switch

- 12VBattery

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

- ABS Systems

ꢀ

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 25 μA

V_GS= ± 20 V, V_DS= 0 V

DC/DC Converters and Off-line UPS

ꢀ

Primary- Side Switch

2.0

4.0

ꢀ

High Current Switching

Applications

± 100

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

T_J= 150°C

100

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25, Notes 1, 2

13 mΩ

DS99498 (11/06)

12 3 4 5 6

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