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IXTP64N055T PDF预览

IXTP64N055T

更新时间: 2024-11-21 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 251K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXTP64N055T 数据手册

 浏览型号IXTP64N055T的Datasheet PDF文件第2页浏览型号IXTP64N055T的Datasheet PDF文件第3页浏览型号IXTP64N055T的Datasheet PDF文件第4页浏览型号IXTP64N055T的Datasheet PDF文件第5页浏览型号IXTP64N055T的Datasheet PDF文件第6页 
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTP64N055T  
IXTY64N055T  
VDSS = 55  
ID25 = 64  
RDS(on) 13 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-220 (IXTP)  
D (TAB)  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
55  
55  
V
V
TO-252 (IXTY)  
VGSM  
Transient  
± 20  
V
G
ID25  
IL  
IDM  
TC = 25°C  
64  
25  
170  
A
A
A
Package Current Limit, RMS  
TO-252  
S
D (TAB)  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
10  
250  
A
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 175°C, RG = 18 Ω  
3
V/ns  
Features  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
130  
W
Low package inductance  
- easy to drive and to protect  
175 °C Operating Temperature  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Easy to mount  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Space savings  
High power density  
Weight  
TO-220  
TO-252  
3
0.35  
g
g
Applications  
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- ABS Systems  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 25 μA  
VGS = ± 20 V, VDS = 0 V  
55  
V
V
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
2.0  
4.0  
High Current Switching  
Applications  
± 100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
μA  
μA  
TJ = 150°C  
100  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
13 mΩ  
DS99498 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  

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