Datasheet > IXTH1N200P3HV

IXTH1N200P3HV

更新时间： 2024-11-11 15:35:39

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	271K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTH1N200P3HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.34	Base Number Matches：	1

IXTH1N200P3HV 数据手册

High Voltage

Power MOSFET

V_DSS

I_D25

R_DS(on) 40

= 2000V

= 1.0A

IXTA1N200P3HV

IXTH1N200P3HV

IXTH1N200P3

N-Channel Enhancement Mode

TO-263HV (IXTA)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247HV (IXTH)

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

2000

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_D110

I_DM

T_C= 25C

T_C= 110C

T_C= 25C, Pulse Width Limited by T_JM

1.0

0.6

3.0

D (Tab)

TO-247 (IXTH)

P_D

T_C= 25C

125

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

D (Tab)

F_C

Mounting Force (TO-263HV)

Mounting Torque (TO-247/HV)

10..65 / 22..14.6

1.13/10

N/lb

G = Gate

S = Source

= Drain

Tab = Drain

M_d

Nm/lb.in

Weight

TO-263HV

TO-247/HV

2.5

6.0

Features



High Blocking Voltage

High Voltage Packages



Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25C, Unless Otherwise Specified)

Min.

2000

2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



Easy to Mount

Space Savings

High Power Density



4.0



100 nA

A

100  A

40 

I_DSS

Applications

T_J= 125C



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems

R_DS(on)

V_GS= 10V, I_D= 0.5A, Note 1



DS100563B(2/17)

12 3 4 5

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