High Voltage
Power MOSFET
VDSS
ID25
RDS(on) 40
= 2000V
= 1.0A
IXTA1N200P3HV
IXTH1N200P3HV
IXTH1N200P3
N-Channel Enhancement Mode
TO-263HV (IXTA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-247HV (IXTH)
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
2000
2000
V
VDGR
V
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
ID110
IDM
TC = 25C
TC = 110C
TC = 25C, Pulse Width Limited by TJM
1.0
0.6
3.0
A
A
A
G
S
D (Tab)
D
TO-247 (IXTH)
PD
TC = 25C
125
W
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
G
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
D
S
D (Tab)
FC
Mounting Force (TO-263HV)
Mounting Torque (TO-247/HV)
10..65 / 22..14.6
1.13/10
N/lb
G = Gate
S = Source
D
= Drain
Tab = Drain
Md
Nm/lb.in
Weight
TO-263HV
TO-247/HV
2.5
6.0
g
g
Features
High Blocking Voltage
High Voltage Packages
Symbol
Test Conditions
Characteristic Values
Advantages
(TJ = 25C, Unless Otherwise Specified)
Min.
2000
2.0
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Easy to Mount
Space Savings
High Power Density
4.0
100 nA
A
100 A
40
IDSS
5
Applications
TJ = 125C
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
RDS(on)
VGS = 10V, ID = 0.5A, Note 1
DS100563B(2/17)
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