是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-247AD |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 7.64 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 21 A |
最大漏极电流 (ID): | 21 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 300 W | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXFH21N50Q | IXYS |
类似代替 |
HiPerFET Power MOSFETs MOSFETs | |
STW19NM50N | STMICROELECTRONICS |
功能相似 |
N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 | |
FDA20N50F | FAIRCHILD |
功能相似 |
N-Channel MOSFET 500V, 22A, 0.26ヘ |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH21N50Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH21N55 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 21A I(D) | TO-218VAR | |
IXTH21N60 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | TO-218VAR | |
IXTH220N055T | IXYS |
获取价格 |
Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH220N075T | IXYS |
获取价格 |
Power Field-Effect Transistor, 220A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M | |
IXTH22N50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH22N50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH22P15 | IXYS |
获取价格 |
Transistor, | |
IXTH22P20 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-218VAR | |
IXTH23N25MA | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |