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IXTH21N50 PDF预览

IXTH21N50

更新时间: 2024-11-17 22:11:03
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IXYS /
页数 文件大小 规格书
4页 111K
描述
MegaMOSFET

IXTH21N50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:7.64
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):21 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:300 W最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):84 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

IXTH21N50 数据手册

 浏览型号IXTH21N50的Datasheet PDF文件第2页浏览型号IXTH21N50的Datasheet PDF文件第3页浏览型号IXTH21N50的Datasheet PDF文件第4页 
MegaMOSTMFET  
VDSS  
ID25 RDS(on)  
IXTH / IXTM 21N50  
IXTH / IXTM 24N50  
500V 21 A 0.25 Ω  
500V 24 A 0.23 Ω  
N-ChannelEnhancementMode  
Symbol  
Test Conditions  
MaximumRatings  
TO-247 AD (IXTH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
D(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
TC = 25°C  
21N50  
24N50  
21  
24  
A
A
TO-204 AE (IXTM)  
IDM  
TC = 25°C, pulse width limited by TJM  
21N50  
24N50  
84  
96  
A
A
PD  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G
D
TJM  
Tstg  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
TO-204 = 18 g, TO-247 = 6 g  
300 °C  
Weight  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
Features  
Internationalstandardpackages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Low package inductance (< 5 nH)  
- easy to drive and to protect  
Fast switching times  
Symbol  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
Switch-modeandresonant-mode  
powersupplies  
Motorcontrols  
UninterruptiblePowerSupplies(UPS)  
DC choppers  
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
500  
2
V
V
VGS(th)  
4
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 µA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
1
mA  
Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
21N50  
24N50  
0.25  
0.23  
Pulse test, t 300 µs, duty cycle d 2 %  
Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91536F(5/97)  
1 - 4  

IXTH21N50 替代型号

型号 品牌 替代类型 描述 数据表
IXFH21N50Q IXYS

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