型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH24N50MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IXTH24N50Q | IXYS |
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Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH24N65X2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH24N65X2 | IXYS |
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Power Field-Effect Transistor | |
IXTH24P20 | IXYS |
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Standard Power MOSFET | |
IXTH24P20 | LITTELFUSE |
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P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2 | |
IXTH250N075T | IXYS |
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N-Channel Enhancement Mode Avalanche Rated | |
IXTH260N055T2 | IXYS |
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TrenchT2TM Power MOSFET | |
IXTH260N055T2 | LITTELFUSE |
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这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 | |
IXTH26N45 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |