Datasheet > IXTH24N50L

IXTH24N50L

更新时间： 2024-11-06 21:15:31

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	114K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTH24N50L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IXTH24N50L 数据手册

Linear^TMPower MOSFET

w/ Extended FBSOA

V_DSS= 500V

I_D25= 24A

R_DS(on)≤ 300mΩ

IXTH24N50L

N-Channel Enhancement Mode

Avalanche Rated

TO-247

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

500

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

Tab

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

G = Gate

S = Source

= Drain

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

Tab = Drain

I_A

T_C= 25°C

E_AS

1.5

P_D

T_C= 25°C

400

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

• Designed for Linear Operation

• International Standard Package

• Avalanche Rated

• Molding Epoxy Meets UL94 V-0

Flammability Classification

-55 ... +150

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.

Weight

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C, Unless Otherwise Specified)

Min.

500

3.5

Typ.

Max.

• Programmable Loads

• Current Regulators

• DC-DC Converters

• Battery Chargers

• DC Choppers

• Temperature and Lighting Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

6.0

±100 nA

I_DSS

50 μA

500 μA

T_J= 125°C

R_DS(on)

V_GS= 20V, I_D= 0.5 • I_D25, Note 1

300 mΩ

DS99125B(01/11)

12 3 4 5 6

中文翻译

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