是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | TO-247 | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 8.5 | 其他特性: | AVALANCHE RATED |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 24 A |
最大漏极电流 (ID): | 24 A | 最大漏源导通电阻: | 0.15 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 300 W |
最大脉冲漏极电流 (IDM): | 96 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXTT24P20 | IXYS |
功能相似 |
Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Met | |
IRFP9240PBF | VISHAY |
功能相似 |
Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH250N075T | IXYS |
获取价格 |
N-Channel Enhancement Mode Avalanche Rated | |
IXTH260N055T2 | IXYS |
获取价格 |
TrenchT2TM Power MOSFET | |
IXTH260N055T2 | LITTELFUSE |
获取价格 |
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 | |
IXTH26N45 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH26N50 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH26N60P | IXYS |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH26N60P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH26P20P | IXYS |
获取价格 |
P-Channel Enhancement Mode Avalanche Rated | |
IXTH26P20P | LITTELFUSE |
获取价格 |
Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTH270N04T4 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |