是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 2.29 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 1200 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 26 A | 最大漏源导通电阻: | 0.27 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 65 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH26P20P | IXYS |
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P-Channel Enhancement Mode Avalanche Rated | |
IXTH26P20P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTH270N04T4 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH270N04T4 | IXYS |
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Power Field-Effect Transistor | |
IXTH27N35MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) | |
IXTH27N35MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH27N40MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH27N40MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH280N055T | IXYS |
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N-Channel Enhancement Mode Avalanche Rated | |
IXTH28N50Q | INFINEON |
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Power MOSFETs Q-Class |