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IXTH2N150L PDF预览

IXTH2N150L

更新时间: 2024-11-22 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关
页数 文件大小 规格书
6页 143K
描述
当功率MOSFET用于线性模式工作时,相对于传统的开关模式具有相当高的热应力和电应力,这是因为同时发生高漏极电压和电流;这些极端应力会造成普通设备出现故障。 IXYS Linear MOSFET旨

IXTH2N150L 数据手册

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Advance Technical Information  
LinearTM Power MOSFET  
w/Extended FBSOA  
VDSS = 1500V  
ID25 = 2A  
RDS(on) 15  
IXTH2N150L  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
Avalanche Rated  
TO-247  
G
D
(Tab)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
2
6
A
A
PD  
TC = 25C  
290  
W
Features  
TJ  
-55 to +150  
+150  
C  
C  
C  
Designed for Linear Operation  
International Standard Package  
Avalanche Rated  
TJM  
Tstg  
-55 to +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Guaranteed FBSOA at 75C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
6
Nm/lb.in  
g
Advantages  
Weight  
Easy to Mount  
Space Savings  
High Power Density  
Applications  
DC Choppers  
DC-DC Converters  
Battery Chagers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
6.0  
Typ.  
Max.  
Programmable Loads  
Current Regulators  
Temperature and Lighting Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
8.5  
100 nA  
IDSS  
15 A  
TJ = 125C  
VGS = 20V, ID = 0.5 • ID25, Note 1  
150 A  
RDS(on)  
15  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100584(12/13)  

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