型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH2R4N120P | IXYS |
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Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH2R4N120P | LITTELFUSE |
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Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡 | |
IXTH300N04T2 | IXYS |
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Power Field-Effect Transistor, 300A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, M | |
IXTH300N04T2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH30N25 | IXYS |
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Power Field-Effect Transistor, 30A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH30N25 | LITTELFUSE |
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Power Field-Effect Transistor, 30A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH30N25L2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH30N45 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 30A I(D) | TO-247AD | |
IXTH30N45S | LITTELFUSE |
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Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH30N50 | IXYS |
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MegaMOS FET |