Datasheet > IXTH2N150L

IXTH2N150L

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	117K
描述
MOSFET N-CH 1500V 2A TO-247

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中文翻译

获取价格

数据手册

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IXTH2N150L 数据手册

Advance Technical Information

Linear^TMPower MOSFET

w/Extended FBSOA

V_DSS= 1500V

I_D25= 2A

R_DS(on) 15

IXTH2N150L

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

TO-247

(Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

G = Gate

S = Source

= Drain

Tab = Drain

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1500

V_DGR

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

P_D

T_C= 25C

290

Features

T_J

-55 to +150

+150

C

^Designed for Linear Operation

^International Standard Package

^Avalanche Rated

T_JM

T_stg

-55 to +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^Guaranteed FBSOA at 75C

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in

Advantages

Weight



Easy to Mount

Space Savings

High Power Density



Applications

^DC Choppers

^DC-DC Converters

^Battery Chagers

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1500

6.0

Typ.

Max.

^Programmable Loads

^Current Regulators

^Temperature and Lighting Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

8.5

100 nA

I_DSS

15 A

T_J= 125C

V_GS= 20V, I_D= 0.5 • I_D25, Note 1

150 A

R_DS(on)



DS100584(12/13)

12 3 4 5 6

中文翻译

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