Datasheet > IXTH300N04T2

IXTH300N04T2

更新时间： 2024-11-21 21:13:55

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	167K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTH300N04T2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTH300N04T2 数据手册

Preliminary Technical Information

TrenchT2^TMPower

MOSFET

V_DSS= 40V

I_D25= 300A

R_DS(on)≤ 2.5mΩ

IXTH300N04T2

N-Channel Enhancement Mode

Avalanche Rated

TO-247

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

V_DGR

(TAB)

V_GSM

Transient

± 20

I_D25

I_LRMS

I_DM

T_C= 25°C

300

160

900

G = Gate

S = Source

= Drain

Lead Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

TAB = Drain

I_A

T_C= 25°C

100

600

Features

E_AS

^zInternational standard package

^z175°C Operating Temperature

^zHigh current handling capability

^zAvalanche Rated

P_D

T_C= 25°C

480

T_J

-55 ... +175

175

°C

T_JM

T_stg

-55 ... +175

Low R_DS(on)

T_L

T_sold

1.6mm (0.062in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

Advantages

M_d

Mounting torque

1.13 / 10

Nm/lb.in.

Easy to mount

Space savings

High power density

Weight

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

• Synchronous Buck Converters

• High Current Switching Power

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

Supplies

2.0

4.0

• Battery Powered Electric Motors

±200 nA

μA

• Resonant-mode power supplies

• Electronics Ballast Application

• Class D Audio Amplifiers

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 150°C

150 μA

2.5 mΩ

R_DS(on)

V_GS= 10V, I_D= 50A, Notes 1, 2

DS100079(11/08)

12 3 4 5 6 7

中文翻译

下载PDF

与IXTH300N04T2相关器件

型号	品牌	获取价格	描述	数据表
IXTH30N25	IXYS	获取价格	Power Field-Effect Transistor, 30A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
IXTH30N25	LITTELFUSE	获取价格	Power Field-Effect Transistor, 30A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
IXTH30N25L2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTH30N45	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 30A I(D) \| TO-247AD
IXTH30N45S	LITTELFUSE	获取价格	Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IXTH30N50	IXYS	获取价格	MegaMOS FET
IXTH30N50L	LITTELFUSE	获取价格	当功率MOSFET用于线性模式工作时，相对于传统的开关模式具有相当高的热应力和电应力，这是
IXTH30N50L2	IXYS	获取价格	Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode
IXTH30N50L2	LITTELFUSE	获取价格	这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用，具有低热阻、高功率密度和正
IXTH30N50P	IXYS	获取价格	Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta