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IXTH30N60L2 PDF预览

IXTH30N60L2

更新时间: 2024-02-19 03:02:55
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IXYS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
5页 147K
描述
Linear L2 Power MOSFET with extended FBSOA

IXTH30N60L2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:2.09
Is Samacsys:NBase Number Matches:1

IXTH30N60L2 数据手册

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Preliminary Technical Information  
Linear L2TM Power  
MOSFET with extended  
FBSOA  
VDSS = 600V  
ID25 = 30A  
RDS(on) 240mΩ  
IXTH30N60L2  
IXTQ30N60L2  
IXTT30N60L2  
N-Channel Enhancement Mode  
Avalanche rated  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
(TAB)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
TO-3P  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
30  
80  
A
A
G
D
S
(TAB)  
IA  
TC = 25°C  
TC = 25°C  
30  
2
A
J
EAS  
TO-268  
PD  
TC = 25°C  
540  
W
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
TJM  
Tstg  
G
S
-55 to +150  
(TAB)  
TL  
1.6mm (0.063in) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting torque (TO-247&TO-3P)  
1.13/10  
Nm/lb.in.  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
Weight  
TO-247  
TO-3P  
TO-268  
6.0  
5.5  
4.0  
g
g
g
Features  
z Designed for linear operation  
z International standard packages  
z Avalanche rated  
Symbol  
Test Conditions  
Characteristic Values  
z Molding epoxies meet UL 94 V-0  
flammability classification  
(TJ = 25°C, unless otherwise specified)  
Min.  
600  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
V
V
z Guaranteed FBSOA at 75°C  
4.5  
Applications  
±100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
300 μA  
z Solid state circuit breakers  
z Soft start controls  
TJ = 125°C  
z Linear amplifiers  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
240 mΩ  
z Programmable loads  
z Current regulators  
© 2009 IXYS CORPORATION, All rights reserved  
DS100101(01/09)  

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