型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH35N25 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH35N25MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) | |
IXTH35N25MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH35N30 | IXYS |
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MegaMOSTMFET | |
IXTH360N055T2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH360N055T2 | IXYS |
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Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, M | |
IXTH36N50P | IXYS |
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PolarHV Power MOSFET | |
IXTH36N50P | LITTELFUSE |
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Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡 | |
IXTH36P10 | IXYS |
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Standard Power MOSFET | |
IXTH36P10 | LITTELFUSE |
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P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2 |