Datasheet > IXTH34N65X2

IXTH34N65X2

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		栅二极管栅极
页数	文件大小	规格书
7页	309K
描述
这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的dv/dt性能。其雪崩能力也增强了器件的强度。此外，借助快速软恢复体二极管，超级结MOSFET有助于

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTH34N65X2 数据手册

X2-Class

Power MOSFET

V_DSS= 650V

I_D25= 34A

R_DS(on) 96m

IXTP34N65X2

IXTH34N65X2

N-Channel Enhancement Mode

Avalanche Rated

TO-220

(IXTP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

650

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-247

(IXTH)

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

D (Tab)

I_A

T_C= 25C

E_AS

G = Gate

= Drain

S = Source

Tab = Drain

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

540

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

Low R_DS(ON)and Q_G

Avalanche Rated



M_d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

TO-220

TO-247

Low Package Inductance

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

Applications

3.0

5.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives



I_DSS

10 A

150 μA



T_J= 125C



Robotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

96 m

DS100675D(6/18)

12 3 4 5 6 7

中文翻译

下载PDF

与IXTH34N65X2相关器件

型号	品牌	获取价格	描述	数据表
IXTH35N25	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH35N25MA	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 35A I(D) \| TO-247(5)
IXTH35N25MB	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH35N30	IXYS	获取价格	MegaMOSTMFET
IXTH360N055T2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTH360N055T2	IXYS	获取价格	Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
IXTH36N50P	IXYS	获取价格	PolarHV Power MOSFET
IXTH36N50P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTH36P10	IXYS	获取价格	Standard Power MOSFET
IXTH36P10	LITTELFUSE	获取价格	P通道标准功率MOSFET的额定电压范围为-100V至-600V，并采用业内流行的TO-2