生命周期: | Not Recommended | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH32P20T | IXYS |
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Power Field-Effect Transistor, 32A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Met | |
IXTH32P20T | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH340N04T4 | LITTELFUSE |
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40V TrenchT4?功率MOSFET构成新一代高电流Trench器件。 它可提供27 | |
IXTH34N65X2 | LITTELFUSE |
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这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的 | |
IXTH35N25 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH35N25MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) | |
IXTH35N25MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH35N30 | IXYS |
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MegaMOSTMFET | |
IXTH360N055T2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH360N055T2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, M |