Datasheet > IXTH32N65X

IXTH32N65X

更新时间： 2024-11-18 21:13:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	222K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH32N65X 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

IXTH32N65X 数据手册

Preliminary Technical Information

X-Class

Power MOSFET

V_DSS= 650V

I_D25= 32A

R_DS(on) 135m

IXTP32N65X

IXTQ32N65X

IXTH32N65X

N-Channel Enhancement Mode

TO-220AB (IXTP)

Tab

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-3P (IXTQ)

T_J= 25C to 150C

650

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

Tab

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

TO-247 (IXTH)

dv/dt

P_D

I_S I_D25, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

500

T_J

-55 ... +150

150

C

T_JM

T_stg

Tab

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

G = Gate

S = Source

= Drain

Tab = Drain

M_d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

TO-220

TO-3P

TO-247

3.0

5.5

6.0

Features



Low R_DS(ON)and Q_G



Low Package Inductance

Fast Intrinsic Rectifier

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



High Power Density

Easy to Mount

Space Savings



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650



3.0

5.5

Applications

100 nA

A



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

T_J= 125C

50 A



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

135 m



DS100585D(6/15)

12 3 4 5 6

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