Datasheet > IXTH3N150

IXTH3N150

更新时间： 2024-11-18 14:51:43

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	152K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH3N150 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTH3N150 数据手册

High Voltage

Power MOSFET

V_DSS= 1500V

I_D25= 3A

R_DS(on) 7.3

IXTH3N150

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1500

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

30

40

G = Gate

S = Source

= Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

Tab = Drain

I_A

E_AS

T_C= 25C

250

Features

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns



International Standard Package

Fast Intrinsic Diode

250



T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

Avalanche Rated

Molding Epoxies meet UL 94 V-0

Flammability Classification

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Advantages

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.



Easy to Mount

Space Savings

Weight



High Power Density

Applications

Symbol

Test Conditions

Characteristic Values



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

(T_J= 25C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

100 nA

I_DSS

10 A

T_J= 125C

100 A

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

7.3



DS100286C(10/13)

12 3 4 5

中文翻译

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