Datasheet > IXTH3N200P3HV

IXTH3N200P3HV

更新时间： 2024-02-12 22:55:00

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	209K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IXTH3N200P3HV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.39
Base Number Matches：	1

IXTH3N200P3HV 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

R_DS(on) 8

= 2000V

= 3A

IXTT3N200P3HV

IXTH3N200P3HV

TO-268HV (IXTT)

N-Channel Enhancement Mode

D (Tab)

TO-247HV (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

2000

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_D110

I_DM

T_C= 25C

T_C= 110C

T_C= 25C, Pulse Width Limited by T_JM

3.0

2.6

9.0

D (Tab)

G = Gate

= Drain

P_D

T_C= 25C

520

S = Source

Tab = Drain

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

M_d

Mounting Torque

1.13/10

Nm/lb.in



High Blocking Voltage

High Voltage Packages

Weight

TO-268HV

TO-247HV

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

2000

3.0

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

5.0



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems



100 nA



I_DSS

10 A

T_J= 125C

250 μA

R_DS(on)

V_GS= 10V, I_D= 1.5A, Note 1



DS100687(8/15)

12 3 4

中文翻译

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