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IXTH48N65X2 PDF预览

IXTH48N65X2

更新时间: 2024-02-29 22:10:11
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 156K
描述
Power Field-Effect Transistor,

IXTH48N65X2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

IXTH48N65X2 数据手册

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Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 48A  
RDS(on) 65m  
IXTH48N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
D (Tab)  
D = Drain  
TJ = 25C to 150C  
650  
650  
V
V
G = Gate  
S = Source  
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab = Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
48  
96  
A
A
IA  
TC = 25C  
TC = 25C  
20  
A
J
EAS  
1.5  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
660  
International Standard Package  
Low RDS(ON) and QG  
TJ  
-55 ... +150  
150  
C  
C  
C  
Avalanche Rated  
TJM  
Tstg  
Low Package Inductance  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in  
g
High Power Density  
Easy to Mount  
Space Savings  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
200 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
65 m  
DS100676A(01/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  

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