Datasheet > IXTH4N150

IXTH4N150

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压脉冲电源开关调节器
页数	文件大小	规格书
6页	141K
描述
高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路和电流调节器。功能与特色: 应用: 优点:

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中文翻译

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数据手册

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IXTH4N150 数据手册

High Voltage

Power MOSFET

V_DSS= 1500V

I_D25= 4A

R_DS(on)≤ 6Ω

IXTH4N150

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1500

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

±30

±40

G = Gate

S = Source

= Drain

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

Tab = Drain

I_A

E_AS

T_C= 25°C

350

Features

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

International Standard Package

Fast Intrinsic Diode

280

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Avalanche Rated

Molding Epoxies meet UL 94 V-0

Flammability Classification

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Advantages

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.

Easy to Mount

Space Savings

High Power Density

Weight

Applications

Symbol

Test Conditions

Characteristic Values

High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

(T_J= 25°C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

±100 nA

I_DSS

10 μA

T_J= 125°C

100 μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

DS100287B(10/12)

12 3 4 5 6

中文翻译

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