Datasheet > IXTH50N20

IXTH50N20

更新时间： 2024-11-19 14:57:03

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压脉冲电源开关调节器
页数	文件大小	规格书
5页	704K
描述
高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路和电流调节器。功能与特色: 应用: 优点:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTH50N20 数据手册

MegaMOS^TMFET

IXTH 50N20 V_DSS

IXTM 50N20 I_D25

= 200 V

= 50 A

R_DS(on)= 45 mΩ

N-ChannelEnhancementMode

Symbol

Test Conditions

MaximumRatings

TO-247 AD (IXTH)

V_DSS

V_DGR

T_J= 25°C to 150°C

200

T_J= 25°C to 150°C; R_GS= 1 MΩ

D(TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_DM

T_C= 25°C

TO-204 AE (IXTM)

T_C= 25°C, pulse width limited by T_JM

200

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

M_d

Mountingtorque

1.13/10 Nm/lb.in.

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

Internationalstandardpackages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

Symbol

Test Conditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

Switch-modeandresonant-mode

powersupplies

Motorcontrols

UninterruptiblePowerSupplies(UPS)

DC choppers

V_DSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

200

V_GS(th)

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

200 µA

Advantages

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.045

Ω

Highpowerdensity

IXYS reserves the right to change limits, test conditions, and dimensions.

91534F(5/97)

1 - 4

12 3 4 5

中文翻译

下载PDF

与IXTH50N20相关器件

型号	品牌	获取价格	描述	数据表
IXTH50N25T	IXYS	获取价格	Trench Gate Power MOSFET N-Channel Enhancement Mode
IXTH50N25T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXTH50N30	IXYS	获取价格	Advance Technical Information High Current Power MOSFET
IXTH50N30L2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTH50P085	IXYS	获取价格	Standard Power MOSFET
IXTH50P10	IXYS	获取价格	Standard Power MOSFET
IXTH50P10	LITTELFUSE	获取价格	P通道标准功率MOSFET的额定电压范围为-100V至-600V，并采用业内流行的TO-2
IXTH52N65X	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTH52N65X	IXYS	获取价格	Power Field-Effect Transistor,
IXTH52P10P	IXYS	获取价格	Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Met