Datasheet > IXTH44P15T

IXTH44P15T

更新时间： 2024-04-09 18:40:57

品牌	Logo	应用领域
力特 - LITTELFUSE		开关驱动高压
页数	文件大小	规格书
8页	264K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱动电路，避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。这让设计人员可以减少元件数量，从而简

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中文翻译

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数据手册

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IXTH44P15T 数据手册

TrenchP^TM

Power MOSFETs

V_DSS= - 150V

I_D25= - 44A

IXTA44P15T

IXTP44P15T

IXTQ44P15T

IXTH44P15T

R_DS(on)

≤

65mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

TO-220AB (IXTP)

TO-3P (IXTQ)

D (Tab)

Tab

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247 (IXTH)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 150

V_DGR

V_GSS

V_GSM

Continuous

Transient

±15

±25

D (Tab)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 44

-130

G = Gate

= Drain

S = Source

Tab = Drain

I_A

E_AS

T_C= 25°C

- 22

P_D

T_C= 25°C

298

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zInternational Standard Packages

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zExtended FBSOA

^zFast Intrinsic Diode

M_d

Mounting Torque (TO-220, TO-247 & TO-3P)

1.13/10

Nm/lb.in.

Low R_DS(ON)and Q_G

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

Advantages

TO-247

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

Applications

(T_J= 25°C, Unless Otherwise Specified)

BV_DSS

V_GS(th)

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

-150

- 2.0

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

- 4.0

I_GSS

I_DSS

V_GS= ±15V, V_DS= 0V

±100 nA

V_DS= V_DSS, V_GS= 0V

- 15 μA

- 750 μA

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

65 mΩ

DS100023B(01/13)

12 3 4 5 6 7 8

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