Datasheet > IXTH450P2

IXTH450P2

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	167K
描述
Polar2?标准功率MOSFET经过专门定制，可为设计师提供在性能和成本之间取得最佳平衡的器件解决方案。这些器件包含了Polar技术平台，以实现低导通电阻（Rdson）。 Polar2标准MO

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技术参数
数据手册

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IXTH450P2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTH450P2 数据手册

Polar2^TM

Power MOSFETs

V_DSS= 500V

I_D25= 16A

R_DS(on)≤ 330mΩ

t_rr(typ)= 400ns

IXTP450P2

IXTQ450P2

IXTH450P2

N-Channel Enhancement Mode

Avalanche Rated

TO-220AB (IXTP)

Fast Intrinsic Diode

Tab

TO-3P (IXTQ)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

TO-247(IXTH)

I_A

E_AS

T_C= 25°C

750

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

300

Tab

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

= Drain

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Avalanche Rated

Weight

TO-220

TO-3P

TO-247

3.0

5.5

6.0

Fast Intrinsic Diode

Dynamic dv/dt Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

500

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.5

Applications

± 100 nA

μA

Switch-Mode and Resonant-Mode

I_DSS

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

T_J= 125°C

25 μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

330 mΩ

Robotics and Servo Controls

DS100241A(10/11)

12 3 4 5 6

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