是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.78 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 42 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH42N15MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH42N15MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH42N20 | IXYS |
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Power Field-Effect Transistor, 42A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH42N20MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH42N20MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH440N055T2 | IXYS |
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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode | |
IXTH440N055T2 | LITTELFUSE |
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这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 | |
IXTH44N25L2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH44P15T | IXYS |
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P-Channel Enhancement Mode Avalanche Rated | |
IXTH44P15T | LITTELFUSE |
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Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱 |