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IXTH42N15 PDF预览

IXTH42N15

更新时间: 2024-11-05 19:57:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
8页 699K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IXTH42N15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.78配置:Single
最大漏极电流 (Abs) (ID):42 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

IXTH42N15 数据手册

 浏览型号IXTH42N15的Datasheet PDF文件第2页浏览型号IXTH42N15的Datasheet PDF文件第3页浏览型号IXTH42N15的Datasheet PDF文件第4页浏览型号IXTH42N15的Datasheet PDF文件第5页浏览型号IXTH42N15的Datasheet PDF文件第6页浏览型号IXTH42N15的Datasheet PDF文件第7页 

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