5秒后页面跳转
IXTH42N15 PDF预览

IXTH42N15

更新时间: 2024-11-21 19:57:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
8页 699K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IXTH42N15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.78配置:Single
最大漏极电流 (Abs) (ID):42 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

IXTH42N15 数据手册

 浏览型号IXTH42N15的Datasheet PDF文件第2页浏览型号IXTH42N15的Datasheet PDF文件第3页浏览型号IXTH42N15的Datasheet PDF文件第4页浏览型号IXTH42N15的Datasheet PDF文件第5页浏览型号IXTH42N15的Datasheet PDF文件第6页浏览型号IXTH42N15的Datasheet PDF文件第7页 

与IXTH42N15相关器件

型号 品牌 获取价格 描述 数据表
IXTH42N15MA IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH42N15MB IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH42N20 IXYS

获取价格

Power Field-Effect Transistor, 42A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
IXTH42N20MA IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH42N20MB IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH440N055T2 IXYS

获取价格

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTH440N055T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTH44N25L2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTH44P15T IXYS

获取价格

P-Channel Enhancement Mode Avalanche Rated
IXTH44P15T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱