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IXTH48N15 PDF预览

IXTH48N15

更新时间: 2024-11-05 19:47:23
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
2页 118K
描述
Power Field-Effect Transistor, 48A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

IXTH48N15 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:TO-247AD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (ID):48 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):192 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTH48N15 数据手册

 浏览型号IXTH48N15的Datasheet PDF文件第2页 
Advance Technical Information  
IXTH 48N15  
IXTT 48N15  
VDSS  
ID25  
= 150 V  
= 48 A  
High Current  
Power MOSFET  
RDS(on) = 32 mΩ  
N-Channel Enhancement Mode  
TO-247 AD (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
150  
150  
V
V
VGS  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
VGSM  
ID25  
TC = 25°C  
48  
A
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
192  
48  
A
A
TO-268 (IXTT) Case Style  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
G
1.0  
(TAB)  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
180  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
International standard packages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Md  
Weight  
1.13/10 Nm/lb.in.  
TO-247AD  
TO-268  
6
4
g
g
Low package inductance  
- easy to drive and to protect  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Easy to mount  
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = ±20 VDC, VDS = 0  
VDS = VDSS  
150  
V
V
2.0  
4.0  
High power density  
±100  
nA  
IDSS  
TJ = 25°C  
TJ = 125°C  
25  
µA  
V
GS = 0 V  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
250  
µA  
RDS(on)  
32 mΩ  
98926-A (10/02)  
© 2002 IXYS All rights reserved  

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