Datasheet > IXTH44N25L2

IXTH44N25L2

更新时间： 2024-11-18 21:19:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	341K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTH44N25L2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXTH44N25L2 数据手册

Advance Technical Information

LinearL2^TM

Power MOSFET

w/ Extended FBSOA

V_DSS= 250V

I_D25= 44A

R_DS(on) 75m

IXTT44N25L2HV

IXTH44N25L2

_OD

N-Channel Enhancement Mode

R_Gi

TO-268HV (IXTT..HV)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 150C

250

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-247 (IXTH)

V_GSS

V_GSM

Continuous

Transient

 20

 30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

120

D (Tab)

D = Drain

I_A

T_C= 25C

E_AS

G = Gate

S = Source

Tab = Drain

P_D

T_C= 25C

400

T_J

-55 ... +150

150



C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^Designed for Linear Operation

^International Standard Packages

^Avalanche Rated

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in

Weight

TO-268HV

TO-247

^Guaranteed FBSOA at 75C

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

250

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

4.5

^Solid State Circuit Breakers

^Soft Start Controls

^Linear Amplifiers

          100 nA

I_DSS

10 A

75 A

^Programmable Loads

^Current Regulators

T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

75 m

DS100920A (7/18)

12 3 4 5 6 7

中文翻译

下载PDF

与IXTH44N25L2相关器件

型号	品牌	获取价格	描述	数据表
IXTH44P15T	IXYS	获取价格	P-Channel Enhancement Mode Avalanche Rated
IXTH44P15T	LITTELFUSE	获取价格	Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱
IXTH450P2	IXYS	获取价格	Polar2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated
IXTH450P2	LITTELFUSE	获取价格	Polar2?标准功率MOSFET经过专门定制，可为设计师提供在性能和成本之间取得最佳平衡
IXTH460P2	IXYS	获取价格	PolarP2â¢ Power MOSFET
IXTH460P2	LITTELFUSE	获取价格	Polar2?标准功率MOSFET经过专门定制，可为设计师提供在性能和成本之间取得最佳平衡
IXTH48N15	IXYS	获取价格	Power Field-Effect Transistor, 48A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
IXTH48N20	IXYS	获取价格	Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
IXTH48N20	LITTELFUSE	获取价格	Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
IXTH48N60X2A	LITTELFUSE	获取价格	Power Field-Effect Transistor,