Datasheet > IXTH420N04T2

IXTH420N04T2

更新时间： 2024-11-18 21:10:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	164K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH420N04T2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.38
Base Number Matches：	1

IXTH420N04T2 数据手册

Advance Technical Information

TrenchT2^TMPower

MOSFET

V_DSS= 40V

I_D25= 420A

R_DS(on)≤ 2.0mΩ

IXTH420N04T2

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

V_DGR

(TAB)

V_GSM

Transient

± 20

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

420

160

G = Gate

S = Source

= Drain

TAB = Drain

T_C= 25°C, Pulse Width Limited by T_JM

1050

I_A

T_C= 25°C

200

960

935

E_AS

P_D

Features

^zInternational Standard Package

^z175°C Operating Temperature

^zHigh Current Handling Capability

^zAvalanche Rated

T_J

-55 ... +175

175

°C

T_JM

T_stg

-55 ... +175

^zFast Intrinsic Diode

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Low R_DS(on)

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.

Weight

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

1.5

3.5

DC/DC Converters and Off-line UPS

Primary- Side Switch

±200 nA

High Current Switching Applications

I_DSS

10 μA

T_J= 150°C

300 μA

R_DS(on)

V_GS= 10V, I_D= 100A, Note 1

1.6

2.0 mΩ

DS100170(7/09)

12 3 4 5 6 7

中文翻译

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