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IXTH36P10 PDF预览

IXTH36P10

更新时间: 2024-11-21 03:13:43
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IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 81K
描述
Standard Power MOSFET

IXTH36P10 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75Is Samacsys:N
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):36 A最大漏极电流 (ID):36 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):180 W
最大脉冲漏极电流 (IDM):144 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTH36P10 数据手册

 浏览型号IXTH36P10的Datasheet PDF文件第2页 
Advance Technical Information  
IXTH 36P10  
Standard Power MOSFET  
VDSS = -100 V  
ID25 = -36 A  
RDS(on) = 75 mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VDSS  
VDGR  
TJ = 25°C to 150°C  
-100  
-100  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
D (TAB)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
-36  
-144  
-36  
A
A
A
TC = 25°C, pulse width limited by TJ  
TC = 25°C  
G = Gate,  
S = Source,  
D=Drain,  
TAB = Drain  
EAR  
PD  
TC = 25°C  
TC = 25°C  
30  
mJ  
W
180  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
International standard package  
JEDEC TO-247 AD  
Low RDS (on) HDMOSTM process  
-55 ... +150  
TL  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Weight  
6
g
Low package inductance (<5 nH)  
- easy to drive and to protect  
Applications  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
High side switching  
Push-pull amplifiers  
DC choppers  
min. typ. max.  
VGS = 0 V, ID = -250 µA  
-100  
-3.0  
V
Automatic test equipment  
VGS(th)  
IGSS  
VDS = VGS, ID = -250 µA  
VGS = ±20 VDC, VDS = 0  
-5.0  
±100  
-25  
V
nA  
µA  
Advantages  
Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
Space savings  
IDSS  
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
-1 mA  
RDS(on)  
VGS = -10 V, ID = 0.5 ID25  
75 mΩ  
High power density  
© 2002 IXYS All rights reserved  
98908 (2/02)  

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