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IXTH36P10 PDF预览

IXTH36P10

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 转换器
页数 文件大小 规格书
3页 110K
描述
P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-247和可表面贴装的TO-268封装。 这些产品是降压转换器以及需要接地的负载的理想选择。 它们可与对等的N

IXTH36P10 数据手册

 浏览型号IXTH36P10的Datasheet PDF文件第2页浏览型号IXTH36P10的Datasheet PDF文件第3页 
Advance Technical Information  
IXTH 36P10  
Standard Power MOSFET  
VDSS = -100 V  
ID25 = -36 A  
RDS(on) = 75 mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VDSS  
VDGR  
TJ = 25°C to 150°C  
-100  
-100  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
D (TAB)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
-36  
-144  
-36  
A
A
A
TC = 25°C, pulse width limited by TJ  
TC = 25°C  
G = Gate,  
S = Source,  
D=Drain,  
TAB = Drain  
EAR  
PD  
TC = 25°C  
TC = 25°C  
30  
mJ  
W
180  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
International standard package  
JEDEC TO-247 AD  
Low RDS (on) HDMOSTM process  
-55 ... +150  
TL  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Weight  
6
g
Low package inductance (<5 nH)  
- easy to drive and to protect  
Applications  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
High side switching  
Push-pull amplifiers  
DC choppers  
min. typ. max.  
VGS = 0 V, ID = -250 µA  
-100  
-3.0  
V
Automatic test equipment  
VGS(th)  
IGSS  
VDS = VGS, ID = -250 µA  
VGS = ±20 VDC, VDS = 0  
-5.0  
±100  
-25  
V
nA  
µA  
Advantages  
Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
Space savings  
IDSS  
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
-1 mA  
RDS(on)  
VGS = -10 V, ID = 0.5 ID25  
75 mΩ  
High power density  
© 2002 IXYS All rights reserved  
98908 (2/02)  

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