Datasheet > IXTH360N055T2

IXTH360N055T2

更新时间： 2024-11-18 21:20:07

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	183K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTH360N055T2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXTH360N055T2 数据手册

Preliminary Technical Information

TrenchT2^TMPower

MOSFET

V_DSS= 55V

I_D25= 360A

R_DS(on)≤ 2.4mΩ

IXTH360N055T2

IXTT360N055T2

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

(TAB)

V_DGR

V_GSM

Transient

± 20

TO-268 (IXTT)

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

360

160

900

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

180

960

935

D (TAB)

E_AS

P_D

T_J

-55 ... +175

175

°C

G = Gate

S = Source

= Drain

TAB = Drain

T_JM

T_stg

-55 ... +175

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

^zInternational Standard Package

^z175°C Operating Temperature

^zHigh Current Handling Capability

^zAvalanche Rated

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-247

TO-268

^zFast Intrinsic Diode

Low R_DS(on)

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Easy to Mount

Space Savings

High Power Density

2.0

4.0

±200 nA

I_DSS

10 μA

Applications

T_J= 150°C

300 μA

DC/DC Converters and Off-line UPS

Primary- Side Switch

High Current Switching Applications

R_DS(on)

V_GS= 10V, I_D= 100A, Note 1

2.4 mΩ

DS100169A(8/09)

12 3 4 5 6 7

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