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IXTH30N60P PDF预览

IXTH30N60P

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 418K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件包含了Polar技术平台,以实现低导通电阻(Rdson)。 Polar标准MOS

IXTH30N60P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.39其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):30 A最大漏源导通电阻:0.24 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTH30N60P 数据手册

 浏览型号IXTH30N60P的Datasheet PDF文件第2页浏览型号IXTH30N60P的Datasheet PDF文件第3页浏览型号IXTH30N60P的Datasheet PDF文件第4页浏览型号IXTH30N60P的Datasheet PDF文件第5页浏览型号IXTH30N60P的Datasheet PDF文件第6页浏览型号IXTH30N60P的Datasheet PDF文件第7页 
PolarHVTM  
Power MOSFET  
IXTH 30N60P  
IXTQ 30N60P  
IXTT 30N60P  
IXTV 30N60P  
IXTV 30N60PS  
VDSS = 600  
ID25 = 30  
RDS(on) 240 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D (TAB)  
D
ID25  
IDM  
TC =25° C  
30  
80  
A
A
S
TC = 25° C, pulse width limited by TJM  
TO-3P (IXTQ)  
IAR  
TC =25° C  
30  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
50  
mJ  
J
1.5  
G
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
D
S
D (TAB)  
TC =25° C  
540  
W
TO-268 (IXTT)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
D (TAB)  
D (TAB)  
PLUS220 (IXTV)  
M
Mounting torque  
Mounting force  
(TO-3P, TO-247)  
(PLUS220)  
1.13/10 Nm/lb.in.  
11..65/2.5..15  
FCd  
N/lb.  
Weight  
TO-247  
TO-3P  
PLUS220  
6.0  
5.5  
4.0  
5.0  
g
g
g
g
G
D
S
TO-268  
PLUS220 (IXTV...S)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
G
S
D (TAB)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 V, VDS = 0  
600  
V
V
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
3.0  
5.0  
100  
nA  
Features  
l
Fast Recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
International standard packages  
Low package inductance  
- easy to drive and to protect  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
l
TJ = 125° C  
l
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
240 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99251E(12/05)  
© 2006 IXYS All rights reserved  

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