是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 31 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH31N20MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH31N20MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH32N65X | IXYS |
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Power Field-Effect Transistor, | |
IXTH32N65X | LITTELFUSE |
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采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通 | |
IXTH32P20T | IXYS |
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Power Field-Effect Transistor, 32A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Met | |
IXTH32P20T | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH340N04T4 | LITTELFUSE |
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40V TrenchT4?功率MOSFET构成新一代高电流Trench器件。 它可提供27 | |
IXTH34N65X2 | LITTELFUSE |
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这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的 | |
IXTH35N25 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH35N25MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) |