Datasheet > IXTH2N300P3HV

IXTH2N300P3HV

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	210K
描述
MOSFET N-CH 3000V 2A TO247HV

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中文翻译

获取价格

数据手册

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IXTH2N300P3HV 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

R_DS(on) 21

= 3000V

= 2A

IXTT2N300P3HV

IXTH2N300P3HV

TO-268HV (IXTT)

N-Channel Enhancement Mode

D (Tab)

TO-247HV (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

3000

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_D110

I_DM

T_C= 25C

T_C= 110C

T_C= 25C, Pulse Width Limited by T_JM

2.0

1.6

6.0

D (Tab)

G = Gate

= Drain

P_D

T_C= 25C

520

S = Source

Tab = Drain

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

M_d

Mounting Torque

1.13/10

Nm/lb.in



High Blocking Voltage

High Voltage Packages

Weight

TO-268HV

TO-247HV

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

3000

3.0

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

5.0



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems



100 nA



I_DSS

10 A

T_J= 125C

250 μA

R_DS(on)

V_GS= 10V, I_D= 1A, Note 1



DS100686(8/15)

12 3 4 5

中文翻译

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